Zhang, X.Y., Xu, R.X., Gao, X.Y., Li, M., Shi, X.N., Ji, Y.D., Qian, F.J., Fan, J.Y., Wang, H.Y., Li, W.-W., and Yang, H. Achieving Ohmic conduction behavior at high electric field via interface manipulation. Retrieved from https://par.nsf.gov/biblio/10227046. Applied Surface Science 516.C Web. doi:10.1016/j.apsusc.2020.146093.

Zhang, X.Y., Xu, R.X., Gao, X.Y., Li, M., Shi, X.N., Ji, Y.D., Qian, F.J., Fan, J.Y., Wang, H.Y., Li, W.-W., & Yang, H. Achieving Ohmic conduction behavior at high electric field via interface manipulation. Applied Surface Science, 516 (C). Retrieved from https://par.nsf.gov/biblio/10227046. https://doi.org/10.1016/j.apsusc.2020.146093

Zhang, X.Y., Xu, R.X., Gao, X.Y., Li, M., Shi, X.N., Ji, Y.D., Qian, F.J., Fan, J.Y., Wang, H.Y., Li, W.-W., and Yang, H. "Achieving Ohmic conduction behavior at high electric field via interface manipulation". Applied Surface Science 516 (C). Country unknown/Code not available. https://doi.org/10.1016/j.apsusc.2020.146093. https://par.nsf.gov/biblio/10227046.

@article{osti_10227046,
place = {Country unknown/Code not available}, title = {Achieving Ohmic conduction behavior at high electric field via interface manipulation}, url = {https://par.nsf.gov/biblio/10227046}, DOI = {10.1016/j.apsusc.2020.146093}, abstractNote = {}, journal = {Applied Surface Science}, volume = {516}, number = {C}, author = {Zhang, X.Y. and Xu, R.X. and Gao, X.Y. and Li, M. and Shi, X.N. and Ji, Y.D. and Qian, F.J. and Fan, J.Y. and Wang, H.Y. and Li, W.-W. and Yang, H.}, editor = {null} }