- Award ID(s):
- Publication Date:
- NSF-PAR ID:
- Journal Name:
- Science Advances
- Page Range or eLocation-ID:
- Sponsoring Org:
- National Science Foundation
More Like this
A generic dual d-band model for interlayer ferromagnetic coupling in a transition-metal doped MnBi 2 Te 4 family of materialsRealization of ferromagnetic (FM) interlayer coupling in magnetic topological insulators (TIs) of the MnBi 2 Te 4 family of materials (MBTs) may pave the way for realizing the high-temperature quantum anomalous Hall effect (high- T QAHE). Here we propose a generic dual d-band (DDB) model to elucidate the energy difference (Δ E = E AFM − E FM ) between the AFM and FM coupling in transition-metal (TM)-doped MBTs, where the valence of TMs splits into d-t 2g and d-e g sub-bands. Remarkably, the DDB shows that Δ E is universally determined by the relative position of the dopant (X) and Mn d-e g / t 2g bands, . If Δ E d > 0, then Δ E > 0 and the desired FM coupling is favored. This surprisingly simple rule is confirmed by first-principles calculations of hole-type 3d and 4d TM dopants. Significantly, by applying the DDB model, we predict the high- T QAHE in the V-doped Mn 2 Bi 2 Te 5 , where the Curie temperature is enhanced by doubling of the MnTe layer, while the topological order mitigated by doping can be restored by strain.
Van der Waals heterostructures offer great versatility to tailor unique interactions at the atomically flat interfaces between dissimilar layered materials and induce novel physical phenomena. By bringing monolayer 1 T’ WTe2, a two-dimensional quantum spin Hall insulator, and few-layer Cr2Ge2Te6, an insulating ferromagnet, into close proximity in an heterostructure, we introduce a ferromagnetic order in the former via the interfacial exchange interaction. The ferromagnetism in WTe2manifests in the anomalous Nernst effect, anomalous Hall effect as well as anisotropic magnetoresistance effect. Using local electrodes, we identify separate transport contributions from the metallic edge and insulating bulk. When driven by an AC current, the second harmonic voltage responses closely resemble the anomalous Nernst responses to AC temperature gradient generated by nonlocal heater, which appear as nonreciprocal signals with respect to the induced magnetization orientation. Our results from different electrodes reveal spin-polarized edge states in the magnetized quantum spin Hall insulator.
Abstract The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature.
The realization of robust intrinsic ferromagnetism in two-dimensional (2D) materials in conjunction with the intriguing quantum anomalous Hall (QAH) effect has provided a fertile ground for novel physics and for the next-generation spintronic and topological devices. On the basis of density functional theory (DFT), we predict that layered 5d transition-metal heavier halides (TMHs), such as ReX 3 (X = Br, I), show intrinsic ferromagnetism with high spin polarization and high Curie temperatures. The outstanding dynamic and thermodynamic stability ensures their experimental feasibility. The strong spin–orbit coupling (SOC) of Re makes the electronic structure of the ReI 3 monolayer topologically nontrivial with a large Chern number ( C = −4). DFT+ U calculations reveal that the 2D system undergoes a nontrivial to trivial transition with increasing on-site Hubbard Coulomb interaction U through the emergence of a Dirac cone. This transition is corroborated by the emergence of chiral edge states and the anomalous Hall conductivity. These findings not only demonstrate room-temperature ferromagnetism in atomically thin 5d TMHs, but also pave the way for the potential realization of the QAH effect with high Chern numbers in pristine 2D layers.
Anomalous Hall effect and perpendicular magnetic anisotropy in ultrathin ferrimagnetic NiCo 2 O 4 films
The inverse spinel ferrimagnetic NiCo2O4possesses high magnetic Curie temperature TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo2O4thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo2O4films on MgAl2O4substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while TCfor 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity [Formula: see text] and its scaling relation with the longitudinal conductivity ([Formula: see text]) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo2O4.