Hickman, Austin Lee, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Li, Lei, Hwang, James C, Grace Xing, Huili, and Jena, Debdeep. Next generation electronics on the ultrawide-bandgap aluminum nitride platform. Retrieved from https://par.nsf.gov/biblio/10228158. Semiconductor Science and Technology 36.4 Web. doi:10.1088/1361-6641/abe5fd.

Hickman, Austin Lee, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Li, Lei, Hwang, James C, Grace Xing, Huili, & Jena, Debdeep. Next generation electronics on the ultrawide-bandgap aluminum nitride platform. Semiconductor Science and Technology, 36 (4). Retrieved from https://par.nsf.gov/biblio/10228158. https://doi.org/10.1088/1361-6641/abe5fd

Hickman, Austin Lee, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Li, Lei, Hwang, James C, Grace Xing, Huili, and Jena, Debdeep. "Next generation electronics on the ultrawide-bandgap aluminum nitride platform". Semiconductor Science and Technology 36 (4). Country unknown/Code not available. https://doi.org/10.1088/1361-6641/abe5fd. https://par.nsf.gov/biblio/10228158.

@article{osti_10228158,
place = {Country unknown/Code not available}, title = {Next generation electronics on the ultrawide-bandgap aluminum nitride platform}, url = {https://par.nsf.gov/biblio/10228158}, DOI = {10.1088/1361-6641/abe5fd}, abstractNote = {}, journal = {Semiconductor Science and Technology}, volume = {36}, number = {4}, author = {Hickman, Austin Lee and Chaudhuri, Reet and Bader, Samuel James and Nomoto, Kazuki and Li, Lei and Hwang, James C and Grace Xing, Huili and Jena, Debdeep}, editor = {null} }