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Title: In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure Under Forward Biasing Condition
Award ID(s):
1760931
PAR ID:
10231190
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
67
Issue:
8
ISSN:
0018-9383
Page Range / eLocation ID:
3056 to 3061
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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