skip to main content


Title: High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy
The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ~52% in the ultraviolet wavelength range are presented.  more » « less
Award ID(s):
1944312
NSF-PAR ID:
10231953
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Conference on Lasers and Electro-Optics
Page Range / eLocation ID:
STu3P.4
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
No document suggestions found