High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy
The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ~52% in the ultraviolet wavelength range are presented.
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- Award ID(s):
- 1944312
- NSF-PAR ID:
- 10231953
- Date Published:
- Journal Name:
- Conference on Lasers and Electro-Optics
- Page Range / eLocation ID:
- STu3P.4
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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