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Title: Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B 1–x Al x N, Al 1–x Ga x N, and Ga 1–x In x N)
Authors:
; ;
Award ID(s):
1726213
Publication Date:
NSF-PAR ID:
10235762
Journal Name:
ACS Applied Materials & Interfaces
Volume:
12
Issue:
41
Page Range or eLocation-ID:
46416 to 46428
ISSN:
1944-8244
Sponsoring Org:
National Science Foundation
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