Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc
Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B 1–x Al x N, Al 1–x Ga x N, and Ga 1–x In x N)
- Award ID(s):
- 1726213
- NSF-PAR ID:
- 10235762
- Date Published:
- Journal Name:
- ACS Applied Materials & Interfaces
- Volume:
- 12
- Issue:
- 41
- ISSN:
- 1944-8244
- Page Range / eLocation ID:
- 46416 to 46428
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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x Ga1−x N/GaN and Scx Al1−x N/AlN grown by molecular beam epitaxy (MBE). In the Scx Ga1−x N/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 1019 cm−3, with an increase directly correlated with the scandium content. In the Scx Al1−x N–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2O3template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 1019and 1021 cm−3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers.