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   https://doi.org/10.1002/pssb.201900612  

   Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep (January 2020, physica status solidi (b))

   Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc_xGa_1−xN/GaN and Sc_xAl_1−xN/AlN grown by molecular beam epitaxy (MBE). In the Sc_xGa_1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10¹⁹ cm⁻³, with an increase directly correlated with the scandium content. In the Sc_xAl_1−xN–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al₂O₃template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10¹⁹and 10²¹ cm⁻³, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. 

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   Al-Tawhid, Athby; Shafe, Abdullah-Al; Bagheri, Pegah; Guan, Yan; Reddy, Pramod; Mita, Seiji; Moody, Baxter; Collazo, Ramon; Sitar, Zlatko; Ahadi, Kaveh (February 2021, Applied Physics Letters)

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   https://doi.org/10.1109/LED.2020.2969515  

   Chatterjee, Bikramjit; Armstrong, Andrew M.; Klein, Brianna A.; Bansal, Anushka; Seyf, Hamid R.; Talreja, Disha; Pogrebnyakov, Alexej; Heller, Eric; Gopalan, Venkatraman; Henry, Asegun S.; et al (March 2020, IEEE Electron Device Letters)
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