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  • Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B 1–x Al x N, Al 1–x Ga x N, and Ga 1–x In x N)
Title: Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B 1–x Al x N, Al 1–x Ga x N, and Ga 1–x In x N)
Award ID(s):
1726213
PAR ID:
10235762
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
ACS Applied Materials & Interfaces
Volume:
12
Issue:
41
ISSN:
1944-8244
Page Range / eLocation ID:
46416 to 46428
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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