Device quality templates of In x Ga 1−x N (x < 0.1) with defect densities comparable to GaN
- Award ID(s):
- 1833323
- Publication Date:
- NSF-PAR ID:
- 10252382
- Journal Name:
- Applied Physics Letters
- Volume:
- 117
- Issue:
- 5
- Page Range or eLocation-ID:
- 052103
- ISSN:
- 0003-6951
- Sponsoring Org:
- National Science Foundation