Device quality templates of In x Ga 1−x N (x < 0.1) with defect densities comparable to GaN
- Award ID(s):
- 1833323
- NSF-PAR ID:
- 10252382
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 117
- Issue:
- 5
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 052103
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation