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Title: Device quality templates of In x Ga 1−x N (x < 0.1) with defect densities comparable to GaN
Authors:
; ; ;
Award ID(s):
1833323
Publication Date:
NSF-PAR ID:
10252382
Journal Name:
Applied Physics Letters
Volume:
117
Issue:
5
Page Range or eLocation-ID:
052103
ISSN:
0003-6951
Sponsoring Org:
National Science Foundation
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