Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high‐speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 103S m−1is observed in certain BiFeO3DWs, which is about 100 000 times greater than the carrier‐induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out‐of‐plane microwave fields and induce power dissipation, which is confirmed by the phase‐field modeling. Since the contributions from mobile‐carrier conduction and bound‐charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano‐devices for radio‐frequency applications.
AC versus DC field effects on the crystallization behavior of a molecular liquid, vinyl ethylene carbonate (VEC)
Using electric fields to control crystallization processes shows a strong potential for improving pharmaceuticals, but these field effects are not yet fully explored nor understood. This study investigates how the application of alternating high electric fields can influence the crystallization kinetics as well as the final crystal product, with a focus on the possible difference between alternating (ac) and static (dc) type fields applied to vinyl ethylene carbonate (VEC), a molecular system with field-induced polymorphism. Relative to ac fields, static electric fields lead to more severe accumulation of impurity ions near the electrodes, possibly affecting the crystallization behavior. By tuning the amplitude and frequency of the electric field, the crystallization rate can be modified, and the crystallization outcome can be guided to form one or the other polymorph with high purity, analogous to the findings derived from dc field experiments. Additionally, it is found that low-frequency ac fields reduce the induction time, promote nucleation near T g , and affect crystallization rates as in the dc case. Consistency is also observed for the Avrami parameters n derived from ac and dc field experiments. Therefore, it appears safe to conclude that ac fields can replicate the effects seen using dc fields, which is advantageous for samples with mobile charges and the resulting conductivity.
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- Award ID(s):
- 1904601
- NSF-PAR ID:
- 10252902
- Date Published:
- Journal Name:
- Physical Chemistry Chemical Physics
- Volume:
- 23
- Issue:
- 1
- ISSN:
- 1463-9076
- Page Range / eLocation ID:
- 498 to 505
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/d0cp05290f
