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1. Investigation of Thermal Properties of β-Ga ₂ O ₃ Nanomembranes on Diamond Heterostructure Using Raman Thermometry

   https://doi.org/10.1149/2162-8777/ab981e  

   Zheng, Yixiong; Swinnich, Edward; Seo, Jung-Hun (June 2020, ECS Journal of Solid State Science and Technology)

   Theβ-Ga₂O₃nanomembrane (NM)/diamond heterostructure is one of the promising ultra-wide bandgap heterostructures that offers numerous complementary advantages from both materials. In this work, we have investigated the thermal properties of theβ-Ga₂O₃NM/diamond heterostructure with three different thicknesses ofβ-Ga₂O₃nanomembranes (NMs), namely 100 nm, 1000 nm, and 4000 nm thickβ-Ga₂O₃NMs using Raman thermometry. The thermal property—temperature relationships of theseβ-Ga₂O₃NM/diamond heterostructures, such as thermal conductivity and interfacial thermal boundary conductance were determined under different temperature conditions (from 100 K to 500 K with a 40 K interval). The result provides benchmark knowledge about the thermal conductivity ofβ-Ga₂O₃NMs over a wide temperature range for the design of novelβ-Ga₂O₃-based power electronics and optoelectronics. 

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2. Flexible β‐Ga ₂ O ₃ Nanomembrane Schottky Barrier Diodes

   https://doi.org/10.1002/aelm.201800714  

   Swinnich, Edward; Hasan, Md Nazmul; Zeng, Ke; Dove, Yash; Singisetti, Uttam; Mazumder, Baishakhi; Seo, Jung‐Hun (January 2019, Advanced Electronic Materials)

   Abstract Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga₂O₃nanomembranes (NMs). In order to realize flexible high power β‐Ga₂O₃SBDs, sub‐micron thick freestanding β‐Ga₂O₃NMs are created from a bulk β‐Ga₂O₃substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga₂O₃NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga₂O₃SBDs exhibit the record high critical breakdown field strength (E_c) of 1.2 MV cm⁻¹in the flat condition and 1.07 MV cm⁻¹ofE_cunder the bending condition. Overall, flexible β‐Ga₂O₃SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high‐performance flexible applications. 

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3. Ca ₂ Ga ₄ Ge ₆ and Ca ₃ Ga ₄ Ge ₆ : Synthesis, Structure, and Electronic Properties

   https://doi.org/10.1002/zaac.202100342  

   Hodge, Kelsey L; Davis, H Olivia; Koster, Karl G; Windl, Wolfgang; Moore, Curtis E; Goldberger, Joshua E (August 2022, Zeitschrift für anorganische und allgemeine Chemie)

   Abstract During the search for transition metal‐free alkyne hydrogenation catalysts, two new ternary Ca−Ga−Ge phases, Ca₂Ga₄Ge₆(Cmc2₁, a=4.1600(10) Å, b=23.283(5) Å, c=10.789(3) Å) and Ca₃Ga₄Ge₆(C2/m, a=24.063(2) Å, b=4.1987(4) Å, c=10.9794(9) Å, β=91.409(4)°), were discovered. These compounds are isostructural to the previously established Yb₂Ga₄Ge₆and Yb₃Ga₄Ge₆analogues, and according to Zintl‐Klemm counting rules, consist of anionic [Ga₄Ge₆]⁴⁻and [Ga₄Ge₆]⁶⁻frameworks in which every Ga and Ge atom would have a formal octet with no Ga−Ga or Ga−Ge π‐bonding. These compounds are metallic, based on temperature dependent electrical resistivity and thermopower measurements for Ca₃Ga₄Ge₆, along with density functional theory calculations for both phases. Unlike the highly active 13‐layer trigonal CaGaGe phase, these new compounds exhibit minimal activity in the semi/full alkyne hydrogenation of phenylacetylene, which is consistent with previous observations that the lack of a formal octet for framework atoms is essential for catalysis in these Zintl‐Klemm compounds. 

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4. Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H ⁺ - and D ⁺ -Implanted Ga ₂ O ₃

   https://doi.org/10.1149/2162-8777/abd458  

   Portoff, Amanda; Venzie, Andrew; Qin, Ying; Stavola, Michael; Fowler, W. Beall; Pearton, Stephen J. (December 2020, ECS Journal of Solid State Science and Technology)

   The ion implantation of H⁺and D⁺into Ga₂O₃produces several O–H and O–D centers that have been investigated by vibrational spectroscopy. These defects include the dominant V_Ga(1)-2H and V_Ga(1)-2D centers studied previously along with additional defects that can be converted into this structure by thermal annealing. The polarization dependence of the spectra has also been analyzed to determine the directions of the transition moments of the defects and to provide information about defect structure. Our experimental results show that the implantation of H⁺(or D⁺) into Ga₂O₃produces two classes of defects with different polarization properties. Theory finds that these O–H (or O–D) centers are based on two shifted configurations of a Ga(1) vacancy that trap H (or D) atom(s). The interaction of V_Ga(1)-nD centers with other defects in the implanted samples has also been investigated to help explain the number of O–D lines seen and their reactions upon annealing. Hydrogenated divacancy V_Ga(1)-V_Ocenters have been considered as an example. 

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5. Solvothermal Synthesis of [Cr ₇ S ₈ (en) ₈ Cl ₂ ]Cl ₃  ⋅ 2H ₂ O with Magnetically Frustrated [Cr ₇ S ₈ ] ⁵⁺ Double‐Cubes**

   https://doi.org/10.1002/chem.202103761  

   Gamage, Eranga H.; Clark, Judith K.; Yazback, Maher; Cheng, Hai‐Ping; Shatruk, Michael; Kovnir, Kirill (December 2021, Chemistry – A European Journal)

   Abstract A novel transition metal chalcohalide [Cr₇S₈(en)₈Cl₂]Cl₃ ⋅ 2H₂O, with [Cr₇S₈]⁵⁺dicubane cationic clusters, has been synthesized by a low temperature solvothermal method, using dimethyl sulfoxide (DMSO) and ethylenediamine (en) solvents. Ethylenediamine ligand exhibits bi‐ and monodentate coordination modes; in the latter case ethylenediamine coordinates to Cr atoms of adjacent clusters, giving rise to a 2D polymeric structure. Although magnetic susceptibility shows no magnetic ordering down to 1.8 K, a highly negative Weiss constant,θ=−224(2) K, obtained from Curie‐Weiss fit of inverse susceptibility, suggests strong antiferromagnetic (AFM) interactions betweenS=3/2 Cr(III) centers. Due to the complexity of the system with (2S+1)⁷=16384 microstates from seven Cr³⁺centers, a simplified model with only two exchange constants was used for simulations. Density‐functional theory (DFT) calculations yielded the two exchange constants to beJ₁=−21.4 cm⁻¹andJ₂=−30.2 cm⁻¹, confirming competing AFM coupling between the shared Cr³⁺center and the peripheral Cr³⁺ions of the dicubane cluster. The best simulation of the experimental data was obtained withJ₁=−20.0 cm⁻¹andJ₂=−21.0 cm⁻¹, in agreement with the slightly stronger AFM exchange within the triangles of the peripheral Cr³⁺ions as compared to the AFM exchange between the central and peripheral Cr³⁺ions. This compound is proposed as a synthon towards magnetically frustrated systems assembled by linking dicubane transition metal‐chalcogenide clusters into polymeric networks. 

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