Nanoscale resistive switching devices for memory and computing applications (Journal Article) | NSF PAGES

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Citation Details

Nanoscale resistive switching devices for memory and computing applications

Authors:: Lee, Seung Hwan; Zhu, Xiaojian; Lu, Wei D.

Award ID(s):: 1900675 1810119

Publication Date:: 2020-05-01

NSF-PAR ID:: 10273212

Journal Name:: Nano Research

Volume:: 13

Issue:: 5

Page Range or eLocation-ID:: 1228 to 1243

ISSN:: 1998-0124

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Publisher's Version of Record
https://doi.org/10.1007/s12274-020-2616-0