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Karim, Md Rezaul, Chen, Zhaoying, Feng, Zixuan, Huang, Hsien-Lien, Johnson, Jared M., Tadjer, Marko J., Hwang, Jinwoo, and Zhao, Hongping. Two-step growth of β-Ga 2 O 3 films on (100) diamond via low pressure chemical vapor deposition. Retrieved from https://par.nsf.gov/biblio/10273766. Journal of Vacuum Science & Technology A 39.2 Web. doi:10.1116/6.0000854.
Karim, Md Rezaul, Chen, Zhaoying, Feng, Zixuan, Huang, Hsien-Lien, Johnson, Jared M., Tadjer, Marko J., Hwang, Jinwoo, & Zhao, Hongping. Two-step growth of β-Ga 2 O 3 films on (100) diamond via low pressure chemical vapor deposition. Journal of Vacuum Science & Technology A, 39 (2). Retrieved from https://par.nsf.gov/biblio/10273766. https://doi.org/10.1116/6.0000854
Karim, Md Rezaul, Chen, Zhaoying, Feng, Zixuan, Huang, Hsien-Lien, Johnson, Jared M., Tadjer, Marko J., Hwang, Jinwoo, and Zhao, Hongping.
"Two-step growth of β-Ga 2 O 3 films on (100) diamond via low pressure chemical vapor deposition". Journal of Vacuum Science & Technology A 39 (2). Country unknown/Code not available. https://doi.org/10.1116/6.0000854.https://par.nsf.gov/biblio/10273766.
@article{osti_10273766,
place = {Country unknown/Code not available},
title = {Two-step growth of β-Ga 2 O 3 films on (100) diamond via low pressure chemical vapor deposition},
url = {https://par.nsf.gov/biblio/10273766},
DOI = {10.1116/6.0000854},
abstractNote = {},
journal = {Journal of Vacuum Science & Technology A},
volume = {39},
number = {2},
author = {Karim, Md Rezaul and Chen, Zhaoying and Feng, Zixuan and Huang, Hsien-Lien and Johnson, Jared M. and Tadjer, Marko J. and Hwang, Jinwoo and Zhao, Hongping},
editor = {null}
}
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