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Title: Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells
Award ID(s):
1809054
NSF-PAR ID:
10274334
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Materials & Design
Volume:
190
Issue:
C
ISSN:
0264-1275
Page Range / eLocation ID:
108565
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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