Demonstration of MOCVD-grown β-Ga2O3 MESFETs with Insulating Mg-Doped Buffer Layers
- Award ID(s):
- 1810041
- NSF-PAR ID:
- 10274439
- Date Published:
- Journal Name:
- 2021 DRC
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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