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  • Investigation of doping-defect interaction in Si doped (AlxGa1-x)2O3 integrating atom probe tomography and first principal calculation
Title: Investigation of doping-defect interaction in Si doped (AlxGa1-x)2O3 integrating atom probe tomography and first principal calculation
Award ID(s):
2019753 1810041
PAR ID:
10274443
Author(s) / Creator(s):
Date Published:
Journal Name:
2021 MRS Spring Meeting
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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