Correlation of Early-Stage Growth Process Conditions with Dislocation Evolution in MOCVD-Based GaP/Si Heteroepitaxy (Journal Article) | NSF PAGES

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Citation Details

Correlation of Early-Stage Growth Process Conditions with Dislocation Evolution in MOCVD-Based GaP/Si Heteroepitaxy

Award ID(s):: 1708957

NSF-PAR ID:: 10275268

Author(s) / Creator(s):: Boyer, J.T.; Blumer, A.N.; Blumer, Z.H.; Lepkowski, D.L.; Grassman, T.J.

Date Published:: 2021-07-01

Journal Name:: Journal of Crystal Growth

ISSN:: 0022-0248

Page Range / eLocation ID:: 126251

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Journal Article:
https://doi.org/10.1016/j.jcrysgro.2021.126251