Abstract The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgapp-GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ∼1013cm−2followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.
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Emergent Electrical Properties of Ensembles of 1D Nanostructures and Their Impact on Room Temperature Electrical Sensing of Ammonium Nitrate Vapor
- Award ID(s):
- 1911370
- PAR ID:
- 10276845
- Date Published:
- Journal Name:
- ACS Sensors
- Volume:
- 3
- Issue:
- 11
- ISSN:
- 2379-3694
- Page Range / eLocation ID:
- 2367 to 2374
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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