Li, B., Sun, Q., and Zhang, X.Y. Lattice correspondence analysis on the formation mechanism for partial stacking faults in hexagonal close-packed metals. Retrieved from https://par.nsf.gov/biblio/10282175. Computational Materials Science 198.C Web. doi:10.1016/j.commatsci.2021.110684.

Li, B., Sun, Q., & Zhang, X.Y. Lattice correspondence analysis on the formation mechanism for partial stacking faults in hexagonal close-packed metals. Computational Materials Science, 198 (C). Retrieved from https://par.nsf.gov/biblio/10282175. https://doi.org/10.1016/j.commatsci.2021.110684

Li, B., Sun, Q., and Zhang, X.Y. "Lattice correspondence analysis on the formation mechanism for partial stacking faults in hexagonal close-packed metals". Computational Materials Science 198 (C). Country unknown/Code not available. https://doi.org/10.1016/j.commatsci.2021.110684. https://par.nsf.gov/biblio/10282175.

@article{osti_10282175,
place = {Country unknown/Code not available}, title = {Lattice correspondence analysis on the formation mechanism for partial stacking faults in hexagonal close-packed metals}, url = {https://par.nsf.gov/biblio/10282175}, DOI = {10.1016/j.commatsci.2021.110684}, abstractNote = {}, journal = {Computational Materials Science}, volume = {198}, number = {C}, author = {Li, B. and Sun, Q. and Zhang, X.Y.}, editor = {null} }