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Title: On the Surface Properties of High Aspect Ratio $\beta$-Ga 2 O 3 Fin Structures Formed by I-MacEtch
Award ID(s):
1809946
NSF-PAR ID:
10283880
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Compound Semiconductor Week (CSW)
Page Range / eLocation ID:
1 to 1
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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