On the Surface Properties of High Aspect Ratio $\beta$-Ga 2 O 3 Fin Structures Formed by I-MacEtch
- Award ID(s):
- 1809946
- NSF-PAR ID:
- 10283880
- Date Published:
- Journal Name:
- Compound Semiconductor Week (CSW)
- Page Range / eLocation ID:
- 1 to 1
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation