Ji, Y., Azizur‐Rahman, K. M., Chang, T., Juang, B.‐C., Prout, D. L., Liang, B., Huffaker, D. L., and Chatziioannou, A. F. Optimization of surface passivation for suppressing leakage current in GaSb PIN devices. Retrieved from https://par.nsf.gov/biblio/10287010. Electronics Letters 56.25 Web. doi:10.1049/el.2020.2063.

Ji, Y., Azizur‐Rahman, K. M., Chang, T., Juang, B.‐C., Prout, D. L., Liang, B., Huffaker, D. L., & Chatziioannou, A. F. Optimization of surface passivation for suppressing leakage current in GaSb PIN devices. Electronics Letters, 56 (25). Retrieved from https://par.nsf.gov/biblio/10287010. https://doi.org/10.1049/el.2020.2063

Ji, Y., Azizur‐Rahman, K. M., Chang, T., Juang, B.‐C., Prout, D. L., Liang, B., Huffaker, D. L., and Chatziioannou, A. F. "Optimization of surface passivation for suppressing leakage current in GaSb PIN devices". Electronics Letters 56 (25). Country unknown/Code not available. https://doi.org/10.1049/el.2020.2063. https://par.nsf.gov/biblio/10287010.

@article{osti_10287010,
place = {Country unknown/Code not available}, title = {Optimization of surface passivation for suppressing leakage current in GaSb PIN devices}, url = {https://par.nsf.gov/biblio/10287010}, DOI = {10.1049/el.2020.2063}, abstractNote = {}, journal = {Electronics Letters}, volume = {56}, number = {25}, author = {Ji, Y. and Azizur‐Rahman, K. M. and Chang, T. and Juang, B.‐C. and Prout, D. L. and Liang, B. and Huffaker, D. L. and Chatziioannou, A. F.}, editor = {null} }