Abstract The analysis of the time profile of electrical signals produced by energy depositions in germanium detectors allows discrimination of events with different topologies. This is especially relevant for experiments searching for the neutrinoless double beta decay of $$^{76}$$ 76 Ge to distinguish the sought-after signal from other background sources. The standard calibration procedures used to tune the selection criteria for double-beta decay events use a $$^{228}$$ 228 Th source, because it provides samples of signal-like events. These samples exhibit energy spatial distributions with subtle different topologies compared to neutrinoless double-beta decay events. In this work, we will characterize these topological differences and, with the support of a $$^{56}$$ 56 Co source, evaluate biases and precision of calibration techniques which use such event samples. Our results will be particularly relevant for future experiments in which a solid estimation of the efficiency is required.
more »
« less
Charge-carrier collective motion in germanium detectors for $$\beta \beta $$-decay searches
Abstract The time analysis of the signal induced by the drift of charge carriers in high purity germanium detectors provides information on the event topology. Millions of charge carriers are produced in a typical event. Their initial distribution, stochastic diffusion and Coulomb self-repulsion affect the time structure of the signal. We present a comprehensive study of these effects and evaluate their impact on the event discrimination capabilities for the three geometries which will be used in the Legend experiment for neutrinoless double-beta decay.
more »
« less
- Award ID(s):
- 1812374
- NSF-PAR ID:
- 10289309
- Date Published:
- Journal Name:
- The European Physical Journal C
- Volume:
- 81
- Issue:
- 1
- ISSN:
- 1434-6044
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
more » « less
Conventional time-of-flight (TOF) measurements yield charge carrier mobilities in photovoltaic cells with time resolution limited by the RC time constant of the device, which is on the order of 0.1–1 µs for the systems targeted in the present work. We have recently developed an alternate TOF method, termed nonlinear photocurrent spectroscopy (NLPC), in which carrier drift velocities are determined with picosecond time resolution by applying a pair of laser pulses to a device with an experimentally controlled delay time. In this technique, carriers photoexcited by the first laser pulse are “probed” by way of recombination processes involving carriers associated with the second laser pulse. Here, we report NLPC measurements conducted with a simplified experimental apparatus in which synchronized 40 ps diode lasers enable delay times up to 100 µs at 5 kHz repetition rates. Carrier mobilities of ∼0.025 cm2/V/s are determined for MAPbI3 photovoltaic cells with active layer thicknesses of 240 and 460 nm using this instrument. Our experiments and model calculations suggest that the nonlinear response of the photocurrent weakens as the carrier densities photoexcited by the first laser pulse trap and broaden while traversing the active layer of a device. Based on this aspect of the signal generation mechanism, experiments conducted with co-propagating and counter-propagating laser beam geometries are leveraged to determine a 60 nm length scale of drift velocity dispersion in MAPbI3 films. Contributions from localized states induced by thermal fluctuations are consistent with drift velocity dispersion on this length scale.
-
Earth-abundant Cu2BaSnS4-xSex (CBTSSe) represents a recent alter- native for Cu2ZnSn(S,Se)4 for solar energy conversion with a lower level of disorder and band tailing. We report the heterogeneous excited-state and trap-state pattern in different solution-processed CBTSSe films using ultrafast two-color pump-probe diffuse reflec- tance microscopic imaging. The spectroscopy/microscopy method can visualize and correlate the microscopic compositional and elec- tronic variations (i.e., trap states) in real space with time-resolved photophysics. Heterogeneity patterns in TAM images show that some grains exhibit a positive excited-state absorption (ESA) signal, while others show negative ground-state bleaching (GSB). Our re- sults visualize that film processing, such as air annealing and Na addition, has a clear influence on the heterogeneity of the excited- state pattern. Importantly, we report stable charge carrier over 100 ps. We applied the image principal component and histogram for quantitative analysis of TAM images to deconvolute and visu- alize the contribution and fingerprints of minority free carriers and sub-band-gap trapped carriers.more » « less
-
more » « less
We present an experimental and theoretical comparison of two different scattering-type scanning near-field optical microscopy (s-SNOM) based techniques in the terahertz regime; nanoscale reflection-type terahertz time-domain spectroscopy (THz nanoscopy) and nanoscale laser terahertz emission microscopy, or laser terahertz emission nanoscopy (LTEN). We show that complementary information regarding a material’s charge carriers can be gained from these techniques when employed back-to-back. For the specific case of THz nanoscopy and LTEN imaging performed on a lightly p-doped InAs sample, we were able to record waveforms with detector signal components demodulated up to the 6thand the 10thharmonic of the tip oscillation frequency, and measure a THz near-field confinement down to 11 nm. A computational approach for determining the spatial confinement of the enhanced electric field in the near-field region of the conductive probe is presented, which manifests an effective “tip sharpening” in the case of nanoscale LTEN due to the alternative geometry and optical nonlinearity of the THz generation mechanism. Finally, we demonstrate the utility of the finite dipole model (FDM) in predicting the broadband scattered THz electric field, and present the first use of this model for predicting a near-field response from LTEN.
-
Abstract The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $$\sim $$ ∼ 0.7 eV requires internal amplification of the charge signal. This can be achieved through high electric field that accelerates charge carriers, which can then generate more charge carriers. The minimum electric field required to generate internal charge amplification is derived for different temperatures. We report the development of a planar point contact Ge detector in terms of its fabrication and the measurements of its leakage current and capacitance as a function of applied bias voltage. With the determination of the measured depletion voltage, the field distribution is calculated using GeFiCa, which predicts that the required electric field for internal charge amplification can be achieved in proximity to the point contact. The energy response to an Am-241 source is characterized and discussed. We conclude that such a detector with internal charge amplification can be used to search for low-mass dark matter.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1140/epjc/s10052-021-08889-0
