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Title: Origin of an unintended increase in carrier density of ternary cation-based amorphous oxide semiconductors
Award ID(s):
1931088
NSF-PAR ID:
10289748
Author(s) / Creator(s):
; ; ; ; ; ; ;
Date Published:
Journal Name:
Applied Surface Science
Volume:
556
Issue:
C
ISSN:
0169-4332
Page Range / eLocation ID:
149676
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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