Origin of an unintended increase in carrier density of ternary cation-based amorphous oxide semiconductors
- Award ID(s):
- 1931088
- NSF-PAR ID:
- 10289748
- Date Published:
- Journal Name:
- Applied Surface Science
- Volume:
- 556
- Issue:
- C
- ISSN:
- 0169-4332
- Page Range / eLocation ID:
- 149676
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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