Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., and Akinwande, Deji. A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon. Retrieved from https://par.nsf.gov/biblio/10291332. Advanced Materials 33.7 Web. doi:10.1002/adma.202007792.

Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., & Akinwande, Deji. A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon. Advanced Materials, 33 (7). Retrieved from https://par.nsf.gov/biblio/10291332. https://doi.org/10.1002/adma.202007792

Ge, Ruijing, Wu, Xiaohan, Liang, Liangbo, Hus, Saban M., Gu, Yuqian, Okogbue, Emmanuel, Chou, Harry, Shi, Jianping, Zhang, Yanfeng, Banerjee, Sanjay K., Jung, Yeonwoong, Lee, Jack C., and Akinwande, Deji. "A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon". Advanced Materials 33 (7). Country unknown/Code not available. https://doi.org/10.1002/adma.202007792. https://par.nsf.gov/biblio/10291332.

@article{osti_10291332,
place = {Country unknown/Code not available}, title = {A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon}, url = {https://par.nsf.gov/biblio/10291332}, DOI = {10.1002/adma.202007792}, abstractNote = {}, journal = {Advanced Materials}, volume = {33}, number = {7}, author = {Ge, Ruijing and Wu, Xiaohan and Liang, Liangbo and Hus, Saban M. and Gu, Yuqian and Okogbue, Emmanuel and Chou, Harry and Shi, Jianping and Zhang, Yanfeng and Banerjee, Sanjay K. and Jung, Yeonwoong and Lee, Jack C. and Akinwande, Deji}, editor = {null} }