Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. Retrieved from https://par.nsf.gov/biblio/10294831. Journal of Applied Physics 128.22 Web. doi:10.1063/5.0031863.

Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., & Marcinkevičius, Saulius. Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells. Journal of Applied Physics, 128 (22). Retrieved from https://par.nsf.gov/biblio/10294831. https://doi.org/10.1063/5.0031863

Yapparov, Rinat, Chow, Yi Chao, Lynsky, Cheyenne, Wu, Feng, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells". Journal of Applied Physics 128 (22). Country unknown/Code not available. https://doi.org/10.1063/5.0031863. https://par.nsf.gov/biblio/10294831.

@article{osti_10294831,
place = {Country unknown/Code not available}, title = {Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells}, url = {https://par.nsf.gov/biblio/10294831}, DOI = {10.1063/5.0031863}, abstractNote = {}, journal = {Journal of Applied Physics}, volume = {128}, number = {22}, author = {Yapparov, Rinat and Chow, Yi Chao and Lynsky, Cheyenne and Wu, Feng and Nakamura, Shuji and Speck, James S. and Marcinkevičius, Saulius}, editor = {null} }