Yapparov, Rinat, Lynsky, Cheyenne, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination. Retrieved from https://par.nsf.gov/biblio/10294832. Applied Physics Express 13.12 Web. doi:10.35848/1882-0786/abc856.

Yapparov, Rinat, Lynsky, Cheyenne, Nakamura, Shuji, Speck, James S., & Marcinkevičius, Saulius. Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination. Applied Physics Express, 13 (12). Retrieved from https://par.nsf.gov/biblio/10294832. https://doi.org/10.35848/1882-0786/abc856

Yapparov, Rinat, Lynsky, Cheyenne, Nakamura, Shuji, Speck, James S., and Marcinkevičius, Saulius. "Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination". Applied Physics Express 13 (12). Country unknown/Code not available. https://doi.org/10.35848/1882-0786/abc856. https://par.nsf.gov/biblio/10294832.

@article{osti_10294832,
place = {Country unknown/Code not available}, title = {Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination}, url = {https://par.nsf.gov/biblio/10294832}, DOI = {10.35848/1882-0786/abc856}, abstractNote = {}, journal = {Applied Physics Express}, volume = {13}, number = {12}, author = {Yapparov, Rinat and Lynsky, Cheyenne and Nakamura, Shuji and Speck, James S. and Marcinkevičius, Saulius}, editor = {null} }