Miroshnik, Leonid, Rummel, Brian D., Li, Andrew B., Balakrishnan, Ganesh, Sinno, Talid, and Han, Sang M. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering. Retrieved from https://par.nsf.gov/biblio/10295275. Journal of Vacuum Science & Technology B 39.6

Miroshnik, Leonid, Rummel, Brian D., Li, Andrew B., Balakrishnan, Ganesh, Sinno, Talid, & Han, Sang M. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering. Journal of Vacuum Science & Technology B, 39 (6). Retrieved from https://par.nsf.gov/biblio/10295275.

Miroshnik, Leonid, Rummel, Brian D., Li, Andrew B., Balakrishnan, Ganesh, Sinno, Talid, and Han, Sang M. "Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering". Journal of Vacuum Science & Technology B 39 (6). Country unknown/Code not available. https://par.nsf.gov/biblio/10295275.

@article{osti_10295275,
place = {Country unknown/Code not available}, title = {Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering}, url = {https://par.nsf.gov/biblio/10295275}, abstractNote = {}, journal = {Journal of Vacuum Science & Technology B}, volume = {39}, number = {6}, author = {Miroshnik, Leonid and Rummel, Brian D. and Li, Andrew B. and Balakrishnan, Ganesh and Sinno, Talid and Han, Sang M.}, }