Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Muccianti, Christine, Alfrey, Adam, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Yu, Hongyi, LeRoy, Brian J., and Schaibley, John R. Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure. Retrieved from https://par.nsf.gov/biblio/10296982. Nano Letters 21.13 Web. doi:10.1021/acs.nanolett.1c01215.

Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Muccianti, Christine, Alfrey, Adam, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Yu, Hongyi, LeRoy, Brian J., & Schaibley, John R. Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure. Nano Letters, 21 (13). Retrieved from https://par.nsf.gov/biblio/10296982. https://doi.org/10.1021/acs.nanolett.1c01215

Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Muccianti, Christine, Alfrey, Adam, Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, Yu, Hongyi, LeRoy, Brian J., and Schaibley, John R. "Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure". Nano Letters 21 (13). Country unknown/Code not available. https://doi.org/10.1021/acs.nanolett.1c01215. https://par.nsf.gov/biblio/10296982.

@article{osti_10296982,
place = {Country unknown/Code not available}, title = {Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure}, url = {https://par.nsf.gov/biblio/10296982}, DOI = {10.1021/acs.nanolett.1c01215}, abstractNote = {}, journal = {Nano Letters}, volume = {21}, number = {13}, author = {Shanks, Daniel N. and Mahdikhanysarvejahany, Fateme and Muccianti, Christine and Alfrey, Adam and Koehler, Michael R. and Mandrus, David G. and Taniguchi, Takashi and Watanabe, Kenji and Yu, Hongyi and LeRoy, Brian J. and Schaibley, John R.}, editor = {null} }