skip to main content


Title: Growth of topological insulator Bi 2 Se 3 particles on GaAs via droplet epitaxy
Award ID(s):
1838504 1828141
NSF-PAR ID:
10301324
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Journal of Vacuum Science & Technology A
Volume:
39
Issue:
5
ISSN:
0734-2101
Page Range / eLocation ID:
053407
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Spontaneous Ge6O8cluster formation under ambient conditions using dispersion enhanced aryloxo ligands.

     
    more » « less