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Title: Investigation of Thermal Properties of β-Ga 2 O 3 Nanomembranes on Diamond Heterostructure Using Raman Thermometry

Theβ-Ga2O3nanomembrane (NM)/diamond heterostructure is one of the promising ultra-wide bandgap heterostructures that offers numerous complementary advantages from both materials. In this work, we have investigated the thermal properties of theβ-Ga2O3NM/diamond heterostructure with three different thicknesses ofβ-Ga2O3nanomembranes (NMs), namely 100 nm, 1000 nm, and 4000 nm thickβ-Ga2O3NMs using Raman thermometry. The thermal property—temperature relationships of theseβ-Ga2O3NM/diamond heterostructures, such as thermal conductivity and interfacial thermal boundary conductance were determined under different temperature conditions (from 100 K to 500 K with a 40 K interval). The result provides benchmark knowledge about the thermal conductivity ofβ-Ga2O3NMs over a wide temperature range for the design of novelβ-Ga2O3-based power electronics and optoelectronics.

 
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Award ID(s):
1809077
NSF-PAR ID:
10303676
Author(s) / Creator(s):
; ;
Publisher / Repository:
The Electrochemical Society
Date Published:
Journal Name:
ECS Journal of Solid State Science and Technology
Volume:
9
Issue:
5
ISSN:
2162-8769
Page Range / eLocation ID:
Article No. 055007
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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