Ahmed, Jamal, Xie, Shiyu, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj, David, John P. R., and Huffaker, Diana L. Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability. IEEE Journal of Quantum Electronics 57.2 Web. doi:10.1109/JQE.2021.3058356.

Ahmed, Jamal, Xie, Shiyu, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj, David, John P. R., & Huffaker, Diana L. Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability. IEEE Journal of Quantum Electronics, 57 (2). https://doi.org/10.1109/JQE.2021.3058356

Ahmed, Jamal, Xie, Shiyu, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj, David, John P. R., and Huffaker, Diana L. "Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability". IEEE Journal of Quantum Electronics 57 (2). Country unknown/Code not available: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/JQE.2021.3058356. https://par.nsf.gov/biblio/10304787.

@article{osti_10304787,
place = {Country unknown/Code not available}, title = {Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability}, url = {https://par.nsf.gov/biblio/10304787}, DOI = {10.1109/JQE.2021.3058356}, abstractNote = {Not Available}, journal = {IEEE Journal of Quantum Electronics}, volume = {57}, number = {2}, publisher = {Institute of Electrical and Electronics Engineers}, author = {Ahmed, Jamal and Xie, Shiyu and Liang, Baolai and Yi, Xin and Jin, Xiao and Kesaria, Manoj and David, John P. R. and Huffaker, Diana L.}, }