Electrolyte-gated transistors (EGTs) hold great promise for next-generation printed logic circuitry, biocompatible integrated sensors, and neuromorphic devices. However, EGT-based complementary circuits with high voltage gain and ultralow driving voltage (<0.5 V) are currently unrealized, because achieving balanced electrical output for both the p- and n-type EGT components has not been possible with current materials. Here we report high-performance EGT complementary circuits containing p-type organic electrochemical transistors (OECTs) fabricated with an ion-permeable organic semiconducting polymer (DPP-g2T) and an n-type electrical double-layer transistor (EDLT) fabricated with an ion-impermeable inorganic indium–gallium–zinc oxide (IGZO) semiconductor. Adjusting the IGZO composition enables tunable EDLT output which, for In:Ga:Zn = 10:1:1 at%, balances that of the DPP-g2T OECT. The resulting hybrid electrolyte-gated inverter (HCIN) achieves ultrahigh voltage gains (>110) under a supply voltage of only 0.7 V. Furthermore, NAND and NOR logic circuits on both rigid and flexible substrates are realized, enabling not only excellent logic response with driving voltages as low as 0.2 V but also impressive mechanical flexibility down to 1-mm bending radii. Finally, the HCIN was applied in electrooculographic (EOG) signal monitoring for recording eye movement, which is critical for the development of wearable medical sensors and also interfaces for human–computer interaction; the high more »
- Publication Date:
- NSF-PAR ID:
- 10306442
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 118
- Issue:
- 44
- Page Range or eLocation-ID:
- Article No. e2111790118
- ISSN:
- 0027-8424
- Publisher:
- Proceedings of the National Academy of Sciences
- Sponsoring Org:
- National Science Foundation
More Like this
-
This paper presents a reverse electrowetting-on-dielectric (REWOD) energy harvester integrated with rectifier, boost converter, and charge amplifier that is, without bias voltage, capable of powering wearable sensors for monitoring human health in real-time. REWOD has been demonstrated to effectively generate electrical current at a low frequency range (< 3 Hz), which is the frequency range for various human activities such as walking, running, etc. However, the current generated from the REWOD without external bias source is insufficient to power such motion sensors. In this work, to eventually implement a fully self-powered motion sensor, we demonstrate a novel bias-free REWOD AC generation and then rectify, boost, and amplify the signal using commercial components. The unconditioned REWOD output of 95–240 mV AC is generated using a 50 μL droplet of 0.5M NaCl electrolyte and 2.5 mm of electrode displacement from an oscillation frequency range of 1–3 Hz. A seven-stage rectifier using Schottky diodes having a forward voltage drop of 135–240 mV and a forward current of 1 mA converts the generated AC signal to DC voltage. ∼3 V DC is measured at the boost converter output, proving the system could function as a self-powered motion sensor. Additionally, a linear relationship of outputmore »
-
This paper presents a reverse electrowetting-on-dielectric (REWOD) energy harvester integrated with rectifier, boost converter, and charge amplifier that is, without bias voltage, capable of powering wearable sensors for monitoring human health in real-time. REWOD has been demonstrated to effectively generate electrical current at a low frequency range (<3 Hz), which is the frequency range for various human activities such as walking, running, etc. However, the current generated from the REWOD without external bias source is insufficient to power such motion sensors. In this work, to eventually implement a fully self-powered motion sensor, we demonstrate a novel bias-free REWOD AC generation and then rectify, boost, and amplify the signal using commercial components. The unconditioned REWOD output of 95-240 mV AC is generated using a 50 μL droplet of 0.5M NaCl electrolyte and 2.5 mm of electrode displacement from an oscillation frequency range of 1-3 Hz. A seven-stage rectifier using Schottky diodes having a forward voltage drop of 135-240 mV and a forward current of 1 mA converts the generated AC signal to DC voltage. ~3 V DC is measured at the boost converter output, proving the system could function as a self-powered motion sensor. Additionally, a linear relationship of output DCmore »
-
Abstract Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS2and p-type WSe2transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.
-
The use of high κ dielectrics lowers the operating voltage in organic field-effect transistors (FETs). Polymer ferroelectrics open the path not just for high κ values but allow processing of the dielectric films via electrical poling. Poled ferroelectric dielectrics in p-type organic FETs was seen to improve carrier mobility and reduce leakage current when compared to unpoled devices using the same dielectric. For n-type FETs, solution-processed ZnO films provide a viable low-cost option. UV–ozone-treated ZnO films was seen to improve the FET performance due to the filling of oxygen vacancies. P-type FETs were fabricated using the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the dielectric along with a donor–acceptor polymer based on diketopyrrolopyrrole (DPP-DTT) as the semiconductor layer. The DPP-DTT FETs yield carrier mobilities upwards of 0.4 cm2/Vs and high on/off ratios when the PVDF-TrFE layer is electrically poled. For n-type FETs, UV–ozone-treated sol–gel ZnO films on SiO2 yield carrier mobilities of 10−2 cm2/Vs. DPP-DTT-based p- and ZnO-based n-type FETs were used in a complementary voltage inverter circuit, showing promising characteristic gain. A basic inverter model was used to simulate the inverter characteristics, using parameters from the individual FET characteristics.
-
In recent years, oxide electronics has emerged as one of the most promising new technologies for a variety of electrical and optoelectronic applications, including next-generation displays, solar cells, batteries, and photodetectors. Oxide electronics have a lot of potential because of their high carrier mobilities and ability to be manufactured at low temperatures. However, the preponderance of oxide semiconductors is n-type oxides, limiting present applications to unipolar devices and stifling the development of oxide-based bipolar devices like p-n diodes and complementary metal-oxide–semiconductors. We have contributed to oxide electronics, particularly on transition metal oxide semiconductors of which the cations include In, Zn, Sn and Ga. We have integrated these oxide semiconductors into thin film transistors (TFTs) as active channel layer in light of the unique combination of electronic and optical properties such as high carrier mobility (5-10 cm2/Vs), optical transparency in the visible regime (>~90%) and mild thermal budget processing (200-400°C). In this study, we achieved four different results. The first result is that unlike several previous reports on oxide p-n junctions fabricated exploiting a thin film epitaxial growth technique (known as molecular beam epitaxy, MBE) or a high-powered laser beam process (known as pulsed laser deposition, PLD) that requires ultra-high vacuummore »