A facile, high‐resolution patterning process is introduced for fabrication of electrolyte‐gated transistors (EGTs) and circuits using a photo‐crosslinkable ion gel and stencil‐based screen printing. The photo‐crosslinkable gel is based on a triblock copolymer incorporating UV‐sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well‐defined 0.5–1 μm thick ion gel films are patterned on semiconductor channels as narrow as 10 μm. The resulting n‐type ZnO EGTs display high electron mobility (>2 cm2Vs−1) and on/off current ratios (>105). Further, EGT‐based inverters exhibit static gains >23 at supply voltages below 3 V, and five‐stage EGT ring oscillator circuits display dynamic propagation delays of 50 μs per stage. In general, the screen printing and photo‐crosslinking strategy provides a clean room‐compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 μs, can be obtained by improving the ion gel conductance.
Electrolyte-gated transistors (EGTs) hold great promise for next-generation printed logic circuitry, biocompatible integrated sensors, and neuromorphic devices. However, EGT-based complementary circuits with high voltage gain and ultralow driving voltage (<0.5 V) are currently unrealized, because achieving balanced electrical output for both the p- and n-type EGT components has not been possible with current materials. Here we report high-performance EGT complementary circuits containing p-type organic electrochemical transistors (OECTs) fabricated with an ion-permeable organic semiconducting polymer (DPP-g2T) and an n-type electrical double-layer transistor (EDLT) fabricated with an ion-impermeable inorganic indium–gallium–zinc oxide (IGZO) semiconductor. Adjusting the IGZO composition enables tunable EDLT output which, for In:Ga:Zn = 10:1:1 at%, balances that of the DPP-g2T OECT. The resulting hybrid electrolyte-gated inverter (HCIN) achieves ultrahigh voltage gains (>110) under a supply voltage of only 0.7 V. Furthermore, NAND and NOR logic circuits on both rigid and flexible substrates are realized, enabling not only excellent logic response with driving voltages as low as 0.2 V but also impressive mechanical flexibility down to 1-mm bending radii. Finally, the HCIN was applied in electrooculographic (EOG) signal monitoring for recording eye movement, which is critical for the development of wearable medical sensors and also interfaces for human–computer interaction; the high voltage amplification of the present HCIN enables EOG signal amplification and monitoring in which a small ∼1.5 mV signal is amplified to ∼30 mV.
more » « less- NSF-PAR ID:
- 10306442
- Publisher / Repository:
- Proceedings of the National Academy of Sciences
- Date Published:
- Journal Name:
- Proceedings of the National Academy of Sciences
- Volume:
- 118
- Issue:
- 44
- ISSN:
- 0027-8424
- Page Range / eLocation ID:
- Article No. e2111790118
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract -
Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal–oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on–off ratio of 108 and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits.more » « less
-
more » « less
Abstract The lamination of a high‐capacitance ion gel dielectric layer onto semiconducting carbon nanotube (CNT) thin‐film transistors (TFTs) that are bottom‐gated with a low‐capacitance polymer dielectric layer drastically reduces the operating voltage of the devices resulting from the capacitive coupling effect between the two dielectric layers sandwiching the CNT channel. As the CNT channel has a network structure, only a compact area of ion gel is required to make the capacitive coupling effect viable, unlike the planar channels of previously reported transistors that required a substantially larger area of ion gel dielectric layer to induce the coupling effect. The capacitively coupled CNT TFTs possess superlative electrical characteristics such as high carrier mobilities (42.0 cm2(Vs)−1for holes and 59.1 cm2(Vs)−1for electrons), steep subthreshold swings (160 mV dec−1for holes and 100 mV dec−1for electrons), and low gate leakage currents (<1 nA). These devices can be further integrated to form complex logic circuits on flexible substrates with high mechanical resilience. The layered geometry of the device coupled with scalable solution‐based fabrication has significant potential for large‐scale flexible electronics.
-
null (Ed.)This paper presents a reverse electrowetting-on-dielectric (REWOD) energy harvester integrated with rectifier, boost converter, and charge amplifier that is, without bias voltage, capable of powering wearable sensors for monitoring human health in real-time. REWOD has been demonstrated to effectively generate electrical current at a low frequency range (< 3 Hz), which is the frequency range for various human activities such as walking, running, etc. However, the current generated from the REWOD without external bias source is insufficient to power such motion sensors. In this work, to eventually implement a fully self-powered motion sensor, we demonstrate a novel bias-free REWOD AC generation and then rectify, boost, and amplify the signal using commercial components. The unconditioned REWOD output of 95–240 mV AC is generated using a 50 μL droplet of 0.5M NaCl electrolyte and 2.5 mm of electrode displacement from an oscillation frequency range of 1–3 Hz. A seven-stage rectifier using Schottky diodes having a forward voltage drop of 135–240 mV and a forward current of 1 mA converts the generated AC signal to DC voltage. ∼3 V DC is measured at the boost converter output, proving the system could function as a self-powered motion sensor. Additionally, a linear relationship of output DC voltage with respect to frequency and displacement demonstrates the potential of this REWOD energy harvester to function as a self-powered wearable motion sensor.more » « less
-
This paper presents a reverse electrowetting-on-dielectric (REWOD) energy harvester integrated with rectifier, boost converter, and charge amplifier that is, without bias voltage, capable of powering wearable sensors for monitoring human health in real-time. REWOD has been demonstrated to effectively generate electrical current at a low frequency range (<3 Hz), which is the frequency range for various human activities such as walking, running, etc. However, the current generated from the REWOD without external bias source is insufficient to power such motion sensors. In this work, to eventually implement a fully self-powered motion sensor, we demonstrate a novel bias-free REWOD AC generation and then rectify, boost, and amplify the signal using commercial components. The unconditioned REWOD output of 95-240 mV AC is generated using a 50 μL droplet of 0.5M NaCl electrolyte and 2.5 mm of electrode displacement from an oscillation frequency range of 1-3 Hz. A seven-stage rectifier using Schottky diodes having a forward voltage drop of 135-240 mV and a forward current of 1 mA converts the generated AC signal to DC voltage. ~3 V DC is measured at the boost converter output, proving the system could function as a self-powered motion sensor. Additionally, a linear relationship of output DC voltage with respect to frequency and displacement demonstrates the potential of this REWOD energy harvester to function as a self-powered wearable motion sensor.more » « less
