Herein, a wavelength‐selective pyroelectric sensor based on a graphene field‐effect transistor (gFET) with a plasmon‐enhanced pyroelectric gate (PG) is reported. The PG gFET (PG‐gFET) uses a poly(vinylidene fluoride
Pyroelectric detectors are often broadband and require external filters for wavelength‐specific applications. This paper reports a tunable, narrowband, and lightweight pyroelectric infrared detector built upon a flexible membrane of As2S3−Ag−P(VDF‐TrFE) with subwavelength grating, which is capable of both on‐chip filtering and photopyroelectric energy conversion. The top surface of this hybrid membrane is a corrugated As2S3−Ag film contributing to narrowband light absorption in the near‐infrared (NIR) regime, and the bottom part is a polyvinylidene fluoride‐trifluoroethylene (PVDF‐TrFE) membrane for the conversion of the absorbed light to an electrical signal. Uniquely, applying a bias voltage to the PVDF‐TrFE membrane enables the tuning of the device's absorption and pyroelectric characteristics owing to the piezoelectrically induced mechanical bending. The resonator exhibited a resonant absorption coefficient of 80% and a full‐width‐half‐maximum of 15 nm within the NIR, a responsivity of 1.4 mV mW−1, and an equivalent noise power of 13 µW Hz−1/2at 1560 nm. By applying a 15‐V bias to the PVDF‐TrFE membrane, the absorption coefficient decreased to 18% due to the change in the grating period and incident angle. The narrowband and tunable features of the As2S3−Ag−P(VDF‐TrFE) pyroelectric detector will benefit a variety of potential applications in sensors, optical spectroscopy, and imaging.
more » « less- NSF-PAR ID:
- 10362092
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 9
- Issue:
- 22
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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‐co ‐trifluoroethylene) or PVDF‐TrFE membrane doped with plasmonic nanoparticles as the gate. Gold nanorods (AuNRs) or silver nanoparticles (AgNPs) are incorporated into the PVDF‐TrFE membrane to enhance the photothermal conversion efficiency of PVDF‐TrFE in a specific narrowband wavelength range. The wavelength‐selective photothermal effect can optically modulate the gate potential of the PG‐gFET; this, in turn, leads to a change in current through the graphene film of the transistor. The PG‐gFET with AuNRs exhibits a maximum responsivity of 0.79 μA mW−1at the wavelength of 660 nm. Replacing AuNRs with AgNPs in the PVDF‐TrFE membrane results in tuning the plasmonic response of the transistor to 488 nm with a maximum responsivity of 0.68 μA mW−1. When plasmonic nanoparticles are absent from the PVDF‐TrFE membrane, the maximum response wavelength of the transistor is shifted to a midinfrared regime at 3125 nm, which is associated with the CC absorption of PVDF‐TrFE. The ability of the PG‐gFET to selectively respond to different light wavelengths will benefit many fields, including pyroelectric sensors, spectroscopy, and imaging. -
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