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  • Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Title: Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics
Award ID(s):
1809691 1810318
NSF-PAR ID:
10310822
Author(s) / Creator(s):
; ; ; ; ; ; ;
Date Published:
Journal Name:
Physical Review Applied
Volume:
16
Issue:
5
ISSN:
2331-7019
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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