An Analytical Model for Dual Gate Piezoelectrically Sensitive ZnO Thin Film Transistors | NSF Public Access Repository

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Citation Details

An Analytical Model for Dual Gate Piezoelectrically Sensitive ZnO Thin Film Transistors

Award ID(s):: 1728497

PAR ID:: 10311026

Author(s) / Creator(s):: Oh, Hongseok; Dayeh, Shadi A.

Date Published:: 2021-08-01

Journal Name:: Advanced Materials Technologies

Volume:: 6

Issue:: 8

ISSN:: 2365-709X

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript
Journal Article:
https://doi.org/10.1002/admt.202100224