Saha, Atanu K., Si, Mengwei, Ye, Peide D., and Gupta, Sumeet K. Polarization switching in Hf 0.5 Zr 0.5 O 2 -dielectric stack: The role of dielectric layer thickness. Retrieved from https://par.nsf.gov/biblio/10315586. Applied Physics Letters 119.12 Web. doi:10.1063/5.0056448.
Saha, Atanu K., Si, Mengwei, Ye, Peide D., & Gupta, Sumeet K. Polarization switching in Hf 0.5 Zr 0.5 O 2 -dielectric stack: The role of dielectric layer thickness. Applied Physics Letters, 119 (12). Retrieved from https://par.nsf.gov/biblio/10315586. https://doi.org/10.1063/5.0056448
Saha, Atanu K., Si, Mengwei, Ye, Peide D., and Gupta, Sumeet K.
"Polarization switching in Hf 0.5 Zr 0.5 O 2 -dielectric stack: The role of dielectric layer thickness". Applied Physics Letters 119 (12). Country unknown/Code not available. https://doi.org/10.1063/5.0056448.https://par.nsf.gov/biblio/10315586.
@article{osti_10315586,
place = {Country unknown/Code not available},
title = {Polarization switching in Hf 0.5 Zr 0.5 O 2 -dielectric stack: The role of dielectric layer thickness},
url = {https://par.nsf.gov/biblio/10315586},
DOI = {10.1063/5.0056448},
abstractNote = {},
journal = {Applied Physics Letters},
volume = {119},
number = {12},
author = {Saha, Atanu K. and Si, Mengwei and Ye, Peide D. and Gupta, Sumeet K.},
}
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