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Title: Polarization switching in Hf 0.5 Zr 0.5 O 2 -dielectric stack: The role of dielectric layer thickness
Award ID(s):
1814756 2008412
PAR ID:
10315586
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
119
Issue:
12
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices. 
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