More Like this

1. Efficient Phasor-Based Dynamic Volt/VAr and Volt/Watt Analysis of Large Distribution Grid with High Penetration of Smart Inverters

   https://doi.org/10.1109/TSG.2021.3138741  

   Koutenaei, Maryam Mahmoudi; Nguyen, Thai-Thanh; Vu, Tuyen; Paudyal, Sumit; Hovsapian, Rob (December 2021, IEEE Transactions on Smart Grid)
2. Distribution Grid Optimal Power Flow in Unbalanced Multiphase Networks With Volt-VAr and Volt-Watt Droop Settings of Smart Inverters

   https://doi.org/10.1109/TIA.2022.3181110  

   Inaolaji, Adedoyin; Savasci, Alper; Paudyal, Sumit (September 2022, IEEE Transactions on Industry Applications)
3. Data-Driven Affinely Adjustable Robust Volt/VAr Control

   https://doi.org/10.1109/TSG.2023.3270112  

   Shi, Naihao; Cheng, Rui; Liu, Liming; Wang, Zhaoyu; Zhang, Qianzhi; Reno, Matthew J (January 2024, IEEE Transactions on Smart Grid)
4. Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

   https://doi.org/10.1038/s43246-022-00310-x  

   Shao, Yixin; Lopez-Dominguez, Victor; Davila, Noraica; Sun, Qilong; Kioussis, Nicholas; Katine, Jordan A.; Khalili Amiri, Pedram (December 2022, Communications Materials)

   Abstract Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage. Here, we report a perpendicular MTJ structure with a high voltage-controlled magnetic anisotropy coefficient ~130 fJ/Vm and high tunnel magnetoresistance exceeding 150%. Owing to the high voltage-controlled magnetic anisotropy coefficient, we demonstrate sub-nanosecond precessional switching of nanoscale MTJs with diameters of 50 and 70 nm, using a voltage lower than 1 V. We also show scaling of this switching mechanism down to 30 nm MTJs, with voltages close to 2 V. The results pave the path for the future development and application of voltage-controlled MRAMs and spintronic devices in emerging computing systems. 

   more » « less
5. Deep Learning for Scalable Optimal Design of Incremental Volt/VAR Control Rules

   https://doi.org/10.1109/LCSYS.2023.3283388  

   Gupta, Sarthak; Mehrizi-Sani, Ali; Chatzivasileiadis, Spyros; Kekatos, Vassilis (January 2023, IEEE Control Systems Letters)