Interlayer Exciton Diode and Transistor (Journal Article) | NSF PAGES

skip to main content

Citation Details

Interlayer Exciton Diode and Transistor

Authors:: Shanks, Daniel N.; Mahdikhanysarvejahany, Fateme; Stanfill, Trevor; Koehler, Michael R.; Mandrus, David G.; Taniguchi, Takashi; Watanabe, Kenji; LeRoy, Brian J.; Schaibley, John R.

Award ID(s):: 2054572 2003583

Publication Date:: 2022-03-17

NSF-PAR ID:: 10320190

Journal Name:: ArXivorg

ISSN:: 2331-8422

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Publisher's Version of Record
https://doi.org/10.48550/arXiv.2203.09444