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Title: Variable temperature probing of minority carrier transport and optical properties in p -Ga 2 O 3
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga 2 O 3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the V Ga − –V O ++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from V Ga − –V O ++ defect complexes.  more » « less
Award ID(s):
1856662 1802208
NSF-PAR ID:
10322918
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
APL Materials
Volume:
10
Issue:
3
ISSN:
2166-532X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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