Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., and Shahedipour-Sandvik, F. The effect of annealing on photoluminescence from defects in ammonothermal GaN. Retrieved from https://par.nsf.gov/biblio/10323291. Journal of Applied Physics 131.3 Web. doi:10.1063/5.0077796.

Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., & Shahedipour-Sandvik, F. The effect of annealing on photoluminescence from defects in ammonothermal GaN. Journal of Applied Physics, 131 (3). Retrieved from https://par.nsf.gov/biblio/10323291. https://doi.org/10.1063/5.0077796

Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., and Shahedipour-Sandvik, F. "The effect of annealing on photoluminescence from defects in ammonothermal GaN". Journal of Applied Physics 131 (3). Country unknown/Code not available. https://doi.org/10.1063/5.0077796. https://par.nsf.gov/biblio/10323291.

@article{osti_10323291,
place = {Country unknown/Code not available}, title = {The effect of annealing on photoluminescence from defects in ammonothermal GaN}, url = {https://par.nsf.gov/biblio/10323291}, DOI = {10.1063/5.0077796}, abstractNote = {}, journal = {Journal of Applied Physics}, volume = {131}, number = {3}, author = {Reshchikov, M. A. and Demchenko, D. O. and Ye, D. and Andrieiev, O. and Vorobiov, M. and Grabianska, K. and Zajac, M. and Nita, P. and Iwinska, M. and Bockowski, M. and McEwen, B. and Shahedipour-Sandvik, F.}, }