Mitigate self-compensation with high crystal symmetry: A first-principles study of formation and activation of impurities in GaN
- Award ID(s):
- 1652871
- NSF-PAR ID:
- 10323489
- Date Published:
- Journal Name:
- Computational Materials Science
- Volume:
- 190
- Issue:
- C
- ISSN:
- 0927-0256
- Page Range / eLocation ID:
- 110283
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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