We report new measurements of branching fractions for 20 UV and blue lines in the spectrum of neutral silicon (Si
This work reports large-scale calculations of electron excitation effective collision strengths and transition rates for a wide range of Sc
- Award ID(s):
- 1714159
- NSF-PAR ID:
- 10486419
- Publisher / Repository:
- DOI PREFIX: 10.3847
- Date Published:
- Journal Name:
- The Astrophysical Journal Supplement Series
- Volume:
- 259
- Issue:
- 2
- ISSN:
- 0067-0049
- Format(s):
- Medium: X Size: Article No. 52
- Size(s):
- ["Article No. 52"]
- Sponsoring Org:
- National Science Foundation
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Abstract i ) originating in the 3s 23p 4s 3Po1,2,1Po1, and 3s 3p 31Do1,2upper levels. Transitions studied include both strong, nearly pure LS multiplets as well as very weak spin-forbidden transitions connected to these upper levels. We also report a new branching fraction measurement of the4P1/2–2Po1/2,3/2intercombination lines in the spectrum of singly ionized silicon (Siii ). The weak spin-forbidden lines of Sii and Siii provide a stringent test on recent theoretical calculations, to which we make comparison. The branching fractions from this study are combined with previously reported radiative lifetimes to yield transition probabilities and log(gf ) values for these lines. We apply these new measurements to abundance determinations in five metal-poor stars. -
A bstract The measurement of the production of charm jets, identified by the presence of a D 0 meson in the jet constituents, is presented in proton–proton collisions at centre-of-mass energies of $$ \sqrt{s} $$ s = 5.02 and 13 TeV with the ALICE detector at the CERN LHC. The D 0 mesons were reconstructed from their hadronic decay D 0 → K − π + and the respective charge conjugate. Jets were reconstructed from D 0 -meson candidates and charged particles using the anti- k T algorithm, in the jet transverse momentum range 5 < p T , chjet < 50 GeV/ c , pseudorapidity | η jet | < 0 . 9 − R , and with the jet resolution parameters R = 0 . 2 , 0 . 4 , 0 . 6. The distribution of the jet momentum fraction carried by a D 0 meson along the jet axis $$ \left({z}_{\Big\Vert}^{\textrm{ch}}\right) $$ z ‖ ch was measured in the range 0 . 4 < $$ {z}_{\Big\Vert}^{\textrm{ch}} $$ z ‖ ch < 1 . 0 in four ranges of the jet transverse momentum. Comparisons of results for different collision energies and jet resolution parameters are also presented. The measurements are compared to predictions from Monte Carlo event generators based on leading-order and next-to-leading-order perturbative quantum chromodynamics calculations. A generally good description of the main features of the data is obtained in spite of a few discrepancies at low p T , chjet . Measurements were also done for R = 0 . 3 at $$ \sqrt{s} $$ s = 5 . 02 and are shown along with their comparisons to theoretical predictions in an appendix to this paper.more » « less
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Water vapor (H2O) is one of the brightest molecular emitters after carbon monoxide (CO) in galaxies with high infrared (IR) luminosity, allowing us to investigate the warm and dense phase of the interstellar medium (ISM) where star formation occurs. However, due to the complexity of its radiative spectrum, H2O is not frequently exploited as an ISM tracer in distant galaxies. Therefore, H2O studies of the warm and dense gas at high-
z remain largely unexplored. In this work, we present observations conducted with the Northern Extended Millimeter Array (NOEMA) toward threez > 6 IR-bright quasarsJ2310+1855 ,J1148+5251 , andJ0439+1634 targeted in their multiple para- and ortho-H2O transitions (312 − 303, 111 − 000, 220 − 211, and 422 − 413), as well as their far-IR (FIR) dust continuum. By combining our data with previous measurements from the literature, we estimated the dust masses and temperatures, continuum optical depths, IR luminosities, and star formation rates (SFR) from the FIR continuum. We modeled the H2O lines using the MOLPOP-CEP radiative transfer code, finding that water vapor lines in our quasar host galaxies are primarily excited in the warm, dense (with a gas kinetic temperature and density ofT kin = 50 K,n H2 ∼ 104.5 − 105 cm−3) molecular medium with a water vapor column density ofN H2O ∼ 2 × 1017 − 3 × 1018 cm−3. High-J H2O lines are mainly radiatively pumped by the intense optically-thin far-IR radiation field associated with a warm dust component at temperatures ofT dust ∼ 80 − 190 K that account for < 5 − 10% of the total dust mass. In the case of J2310+1855, our analysis points to a relatively high value of the continuum optical depth at 100 μm (τ 100 ∼ 1). Our results are in agreement with expectations based on the H2O spectral line energy distribution of local and high-z ultra-luminous IR galaxies and active galactic nuclei (AGN). The analysis of the Boltzmann diagrams highlights the interplay between collisions and IR pumping in populating the high H2O energy levels and it allows us to directly compare the excitation conditions in the targeted quasar host galaxies. In addition, the observations enable us to sample the high-luminosity part of the H2O–total-IR (TIR) luminosity relations (L H2O −L TIR). Overall, our results point to supralinear trends that suggest H2O–TIR relations are likely driven by IR pumping, rather than the mere co-spatiality between the FIR continuum- and line-emitting regions. The observedL H2O/L TIRratios in ourz > 6 quasars do not show any strong deviations with respect to those measured in star-forming galaxies and AGN at lower redshifts. This supports the notion that H2O can be likely used to trace the star formation activity buried deep within the dense molecular clouds. -
Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).more » « less
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null (Ed.)A bstract The p T -differential production cross sections of prompt and non-prompt (produced in beauty-hadron decays) D mesons were measured by the ALICE experiment at midrapidity ( | y | < 0 . 5) in proton-proton collisions at $$ \sqrt{s} $$ s = 5 . 02 TeV. The data sample used in the analysis corresponds to an integrated luminosity of (19 . 3 ± 0 . 4) nb − 1 . D mesons were reconstructed from their decays D 0 → K − π + , D + → K − π + π + , and $$ {\mathrm{D}}_{\mathrm{s}}^{+}\to \upphi {\uppi}^{+}\to {\mathrm{K}}^{-}{\mathrm{K}}^{+}{\uppi}^{+} $$ D s + → ϕ π + → K − K + π + and their charge conjugates. Compared to previous measurements in the same rapidity region, the cross sections of prompt D + and $$ {\mathrm{D}}_{\mathrm{s}}^{+} $$ D s + mesons have an extended p T coverage and total uncertainties reduced by a factor ranging from 1.05 to 1.6, depending on p T , allowing for a more precise determination of their p T -integrated cross sections. The results are well described by perturbative QCD calculations. The fragmentation fraction of heavy quarks to strange mesons divided by the one to non-strange mesons, f s / ( f u + f d ), is compatible for charm and beauty quarks and with previous measurements at different centre-of-mass energies and collision systems. The $$ \mathrm{b}\overline{\mathrm{b}} $$ b b ¯ production cross section per rapidity unit at midrapidity, estimated from non-prompt D-meson measurements, is $$ \mathrm{d}{\sigma}_{\mathrm{b}\overline{\mathrm{b}}}/\mathrm{d}y\left|{}_{\left|\mathrm{y}\right|<0.5}=34.5\pm 2.4{\left(\mathrm{stat}\right)}_{-2.9}^{+4.7}\left(\mathrm{tot}.\mathrm{syst}\right)\right. $$ d σ b b ¯ / d y y < 0.5 = 34.5 ± 2.4 stat − 2.9 + 4.7 tot . syst μb. It is compatible with previous measurements at the same centre-of-mass energy and with the cross section pre- dicted by perturbative QCD calculations.more » « less
