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1. Anatomy of strike-slip fault tsunami genesis

   https://doi.org/10.1073/pnas.2025632118  

   Elbanna, Ahmed ; Abdelmeguid, Mohamed ; Ma, Xiao ; Amlani, Faisal ; Bhat, Harsha S. ; Synolakis, Costas ; Rosakis, Ares J. ( May 2021 , Proceedings of the National Academy of Sciences)

   Tsunami generation from earthquake-induced seafloor deformations has long been recognized as a major hazard to coastal areas. Strike-slip faulting has generally been considered insufficient for triggering large tsunamis, except through the generation of submarine landslides. Herein, we demonstrate that ground motions due to strike-slip earthquakes can contribute to the generation of large tsunamis (>1 m), under rather generic conditions. To this end, we developed a computational framework that integrates models for earthquake rupture dynamics with models of tsunami generation and propagation. The three-dimensional time-dependent vertical and horizontal ground motions from spontaneous dynamic rupture models are used to drive boundary motionsmore »in the tsunami model. Our results suggest that supershear ruptures propagating along strike-slip faults, traversing narrow and shallow bays, are prime candidates for tsunami generation. We show that dynamic focusing and the large horizontal displacements, characteristic of strike-slip earthquakes on long faults, are critical drivers for the tsunami hazard. These findings point to intrinsic mechanisms for sizable tsunami generation by strike-slip faulting, which do not require complex seismic sources, landslides, or complicated bathymetry. Furthermore, our model identifies three distinct phases in the tsunamic motion, an instantaneous dynamic phase, a lagging coseismic phase, and a postseismic phase, each of which may affect coastal areas differently. We conclude that near-source tsunami hazards and risk from strike-slip faulting need to be re-evaluated.

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2. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments andmore »modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
3. Expedition 386 Scientific Prospectus: Japan Trench Paleoseismology

   https://doi.org/10.14379/iodp.sp.386.2019  

   Strasser, M. ; Ikehara, K. ; Cotterill, C. ( October 2019 , Scientific prospectus)

   Short historical and even shorter instrumental records limit our perspective of earthquake maximum magnitude and recurrence and thus are inadequate to fully characterize Earth’s complex and multiscale seismic behavior and its consequences. Examining prehistoric events preserved in the geological record is essential to reconstruct the long-term history of earthquakes and to deliver observational data that help to reduce epistemic uncertainties in seismic hazard assessment for long return periods. “Submarine paleoseismology” is a promising approach to investigate deposits from the deep sea, where earthquakes leave traces preserved in the stratigraphic succession. However, at present we lack the comprehensive data sets andmore »long-term records that allow for conclusive distinctions between quality and completeness of the paleoseismic archives. Motivated by the mission to fill the gap in long-term records of giant (Mw 9 class) earthquakes, International Ocean Discovery Program (IODP) Expedition 386, Japan Trench Paleoseismology, aims at testing and developing submarine paleoseismology in the Japan Trench. We will implement a multicoring approach by Mission Specific Platform shallow subsurface (40 m) giant piston coring to recover the continuous upper Pleistocene to Holocene stratigraphic successions of trench-fill basins along an axis-parallel transect of the 7–8 km deep trench. The cores from 18 proposed primary (and/or 13 alternate) sites will be used for multimethod applications to characterize event deposits for which the detailed stratigraphic expressions and spatiotemporal distribution will be analyzed for proxy evidence of earthquakes. Sediment remobilization related to the 2011 Mw 9.0 Tohoku-Oki earthquake and the respective deposits are preserved in trench basins formed by flexural bending of the subducting Pacific plate. These basins are ideal study areas for testing event deposits for earthquake triggering because they are poorly connected for sediment transport from the shelf and experience high sedimentation rates and low benthos activity (and thus high preservation potential) in the hadal environment. Results from conventional coring covering the last ~1,500 y reveal good agreement between the sedimentary record and historical documents. Subbottom profile images are consistent with basin-fill successions of episodic muddy turbidite deposition and thus define clear targets for paleoseismologic investigations on longer timescales accessible only by IODP coring. We will apply, further refine, and implement new methods for establishing event stratigraphy in the deep sea and for recognizing giant versus smaller earthquakes versus other driving mechanisms. Our results can potentially produce a fascinating record that unravels an earthquake history that is 10–100 times longer than currently available information. This would contribute to a tremendous advance in the understanding of the recurrence pattern of giant earthquakes and earthquake-induced geohazards globally and provide new constraints on sediment and carbon flux of event-triggered sediment mobilization to a deep-sea trench and its influence on the hadal environment.« less
4. The Impact of Complex Volcanic Plumbing on the Nature of Seismicity in the Developing Magmatic Natron Rift, Tanzania

   https://doi.org/10.3389/feart.2020.609805  

   Reiss, Miriam Christina ; Muirhead, James D. ; Laizer, Amani S. ; Link, Frederik ; Kazimoto, Emmanuel O. ; Ebinger, Cynthia J. ; Rümpker, Georg ( February 2021 , Frontiers in Earth Science)

   Constraining the architecture of complex 3D volcanic plumbing systems within active rifts, and their impact on rift processes, is critical for examining the interplay between faulting, magmatism and magmatic fluids in developing rift segments. The Natron basin of the East African Rift System provides an ideal location to study these processes, owing to its recent magmatic-tectonic activity and ongoing active carbonatite volcanism at Oldoinyo Lengai. Here, we report seismicity and fault plane solutions from a 10 month-long temporary seismic network spanning Oldoinyo Lengai, Naibor Soito volcanic field and Gelai volcano. We locate 6,827 earthquakes with M L −0.85 to 3.6,more »which are related to previous and ongoing magmatic and volcanic activity in the region, as well as regional tectonic extension. We observe seismicity down to ∼17 km depth north and south of Oldoinyo Lengai and shallow seismicity (3–10 km) beneath Gelai, including two swarms. The deepest seismicity (∼down to 20 km) occurs above a previously imaged magma body below Naibor Soito. These seismicity patterns reveal a detailed image of a complex volcanic plumbing system, supporting potential lateral and vertical connections between shallow- and deep-seated magmas, where fluid and melt transport to the surface is facilitated by intrusion of dikes and sills. Focal mechanisms vary spatially. T-axis trends reveal dominantly WNW-ESE extension near Gelai, while strike-slip mechanisms and a radial trend in P-axes are observed in the vicinity of Oldoinyo Lengai. These data support local variations in the state of stress, resulting from a combination of volcanic edifice loading and magma-driven stress changes imposed on a regional extensional stress field. Our results indicate that the southern Natron basin is a segmented rift system, in which fluids preferentially percolate vertically and laterally in a region where strain transfers from a border fault to a developing magmatic rift segment.« less
5. Finite Slip Models of the 2019 Ridgecrest Earthquake Sequence Constrained by Space Geodetic Data and Aftershock Locations

   https://doi.org/10.1785/0120200060  

   Jin, Zeyu ; Fialko, Yuri ( June 2020 , Bulletin of the Seismological Society of America)

   ABSTRACT The July 2019 Ridgecrest, California, earthquake sequence involved two large events—the M 6.4 foreshock and the M 7.1 mainshock that ruptured a system of intersecting strike-slip faults. We present analysis of space geodetic observations including Synthetic Aperture Radar and Global Navigation Satellite System data, geological field mapping, and seismicity to constrain the subsurface rupture geometry and slip distribution. The data render a complex pattern of faulting with a number of subparallel as well as cross-cutting fault strands that exhibit variations in both strike and dip angles, including a “flower structure” formed by shallow splay faults. Slip inversions are performed using bothmore »homogeneous and layered elastic half-space models informed by the local seismic tomography data. The inferred slip distribution suggests a moderate amount of the shallow coseismic slip deficit. The peak moment release occurred in the depth interval of 3–4 km, consistent with results from previous studies of major strike-slip earthquakes, and the depth distribution of seismicity in California. We use the derived slip models to investigate stress transfer and possible triggering relationships between the M 7.1 mainshock and the M 6.4 foreshock, as well as other moderate events that occurred in the vicinity of the M 7.1 hypocenter. Triggering is discouraged for the average strike of the M 7.1 rupture (320°) but encouraged for the initial orientation of the mainshock rupture suggested by the first-motion data (340°). This lends support to a scenario according to which the earthquake rupture nucleated on a small fault that was more optimally oriented with respect to the regional stress and subsequently propagated along the less-favorably oriented pre-existing faults, possibly facilitated by dynamic weakening. The nucleation site of the mainshock experienced positive dynamic Coulomb stress changes that are much larger than the static stress changes, yet the former failed to initiate rupture.« less