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Title: Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant
Award ID(s):
2004462
PAR ID:
10325272
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
130
Issue:
10
ISSN:
0021-8979
Page Range / eLocation ID:
105702
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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