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Title: Strong effect of scandium source purity on chemical and electronic properties of epitaxial Sc x Al 1x N/GaN heterostructures
Authors:
; ; ; ; ; ;  ;
Award ID(s):
1719875
Publication Date:
NSF-PAR ID:
10325325
Journal Name:
APL Materials
Volume:
9
Issue:
9
Page Range or eLocation-ID:
091106
ISSN:
2166-532X
Sponsoring Org:
National Science Foundation
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