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This content will become publicly available on March 1, 2023

Title: Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy
Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes.
Authors:
; ; ; ;  ;
Award ID(s):
1719875 1839196
Publication Date:
NSF-PAR ID:
10325372
Journal Name:
AIP Advances
Volume:
12
Issue:
3
Page Range or eLocation-ID:
035023
ISSN:
2158-3226
Sponsoring Org:
National Science Foundation
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