Wang, Xiaopeng, Fabi, Gianluca, Chaudhuri, Reet, Hickman, Austin, Asadi, Mohammad Javad, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep, Farina, Marco, and Hwang, James C. Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures. Retrieved from https://par.nsf.gov/biblio/10325650. Applied Physics Letters 120.1 Web. doi:10.1063/5.0072358.

Wang, Xiaopeng, Fabi, Gianluca, Chaudhuri, Reet, Hickman, Austin, Asadi, Mohammad Javad, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep, Farina, Marco, & Hwang, James C. Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures. Applied Physics Letters, 120 (1). Retrieved from https://par.nsf.gov/biblio/10325650. https://doi.org/10.1063/5.0072358

Wang, Xiaopeng, Fabi, Gianluca, Chaudhuri, Reet, Hickman, Austin, Asadi, Mohammad Javad, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep, Farina, Marco, and Hwang, James C. "Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures". Applied Physics Letters 120 (1). Country unknown/Code not available: APS. https://doi.org/10.1063/5.0072358. https://par.nsf.gov/biblio/10325650.

@article{osti_10325650,
place = {Country unknown/Code not available}, title = {Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures}, url = {https://par.nsf.gov/biblio/10325650}, DOI = {10.1063/5.0072358}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {120}, number = {1}, publisher = {APS}, author = {Wang, Xiaopeng and Fabi, Gianluca and Chaudhuri, Reet and Hickman, Austin and Asadi, Mohammad Javad and Nomoto, Kazuki and Xing, Huili Grace and Jena, Debdeep and Farina, Marco and Hwang, James C.}, }