Hasan, Samiul, Mamun, Abdullah, Hussain, Kamal, Gaevski, Mikhail, Ahmad, Iftikhar, and Khan, Asif. Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate. Retrieved from https://par.nsf.gov/biblio/10329389. Journal of Materials Research 36.21 Web. doi:10.1557/s43578-021-00387-z.

Hasan, Samiul, Mamun, Abdullah, Hussain, Kamal, Gaevski, Mikhail, Ahmad, Iftikhar, & Khan, Asif. Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate. Journal of Materials Research, 36 (21). Retrieved from https://par.nsf.gov/biblio/10329389. https://doi.org/10.1557/s43578-021-00387-z

Hasan, Samiul, Mamun, Abdullah, Hussain, Kamal, Gaevski, Mikhail, Ahmad, Iftikhar, and Khan, Asif. "Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate". Journal of Materials Research 36 (21). Country unknown/Code not available. https://doi.org/10.1557/s43578-021-00387-z. https://par.nsf.gov/biblio/10329389.

@article{osti_10329389,
place = {Country unknown/Code not available}, title = {Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate}, url = {https://par.nsf.gov/biblio/10329389}, DOI = {10.1557/s43578-021-00387-z}, abstractNote = {}, journal = {Journal of Materials Research}, volume = {36}, number = {21}, author = {Hasan, Samiul and Mamun, Abdullah and Hussain, Kamal and Gaevski, Mikhail and Ahmad, Iftikhar and Khan, Asif}, }