Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors
- Award ID(s):
- 1720633
- PAR ID:
- 10330201
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- ISSN:
- 2199-160X
- Page Range / eLocation ID:
- 2101370
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation