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Title: Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors
Award ID(s):
1720633
NSF-PAR ID:
10330201
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Advanced Electronic Materials
ISSN:
2199-160X
Page Range / eLocation ID:
2101370
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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